Removal and Preparation of Electrodeposited Semiconductors for High Impedance Hall Effect Measurements
Removal and Preparation of Electrodeposited Semiconductors for High Impedance Hall Effect Measurements
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用于高阻抗霍尔效应测量的电解沉积半导体的去除和制备
DOI：
10.1149/1.2085430
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发表时间：
1991
影响因子：
3.9
通讯作者：
M. Cocivera
中科院分区：
文献类型：
--
作者：
J. Windheim;H. Wynands;M. Cocivera
用于霍尔效应测量的电沉积半导体的制备很复杂，因为这些材料必须附着在高导电性的衬底上。因此，人们开发了从导电衬底上重复去除大面积样品的方法，并将适当制备的样品用于随温度变化的霍尔测量和电阻率测量。仪器的设计和制造使用厚度约为1μm的薄膜，常规测量源阻抗低至250ΩV的霍尔电压，最高可达1012μ。对许多电沉积材料进行了测量：、、和。发现经Ar退火电沉积后的薄膜始终为p型，其电阻率通常为10~6-10~7Ωcm·p·→·n，其转化是通过高温下Cd的扩散实现的。也是p型的，但具有比低得多的电阻率和更高的载流子浓度。和都是n型，载流子浓度分别为1016cM−3和1014-1016cM−3。
The preparation of electrodeposited semiconductors for Hall effect measurements is complicated by the fact that these materials are, by necessity, attached to highly conducting substrates. As a result, methods were developed to reproducibly remove large area samples from their conducting substrates, and suitably prepared samples were used for temperature‐dependent Hall measurements and resistivity measurements. Apparatus was designed and built to routinely measure Hall voltages as low as 250 μV for source impedances up to 1012 Ω using films about 1 μm in thickness. Measurements were performed on numerous electrodeposited materials: , , , and . Argon annealed electrodeposited was found to be consistently p‐type, with resistivity values typically 106–107 Ω cm p → n conversion of was achieved by diffusion of Cd at high temperature. was also p‐type, but had much lower resistivity and higher carrier concentration than . and were both n‐type with carrier concentrations typically 1016 cm−3 and 1014–1016 cm−3, respectively.