Reduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices
Reduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices
复制标题
通过掺入氮减少 Al2O3/SiO2 堆叠栅极电介质中的电荷捕获位点，实现高度可靠的 4H-SiC MIS 器件
DOI：
10.4028/www.scientific.net/msf.679-680.496
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Heiji Watanabe
中科院分区：
文献类型：
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作者：
T. Hosoi;Yusuke Kagei;Takashi Kirino;Shuhei Mitani;Y. Nakano;Takashi Nakamura;T. Shimura;Heiji Watanabe
采用氮氧化铝（AlON）栅压结构的SiC基金属-绝缘体-半导体（MIS）器件具有上级的平带电压（Vfb）稳定性。MIS电容器与栅极绝缘体组成的厚的纯氧化铝（Al 2 O 3）和薄的下层SiO2层上制作的n型4 H-SiC衬底表现出积极的VFB偏移由于衬底电子注入取决于施加的栅极偏压和SiO2夹层的厚度。对于具有AlON/SiO2堆叠栅介质的器件，这种大的Vfb偏移被大大抑制，这表明Al 2 O3膜中的电子捕获位点主要由氮掺入补偿。这一发现有助于在阈值电压稳定性方面实现高度可靠的基于SiC的MIS场效应晶体管（MISFET）。
Superior flatband voltage (Vfb) stability of SiC-based metal-insulator-semiconductor (MIS) devices with aluminum oxynitride (AlON) gate dielectrics was demonstrated. MIS capacitors with gate insulators consisting of a thick pure aluminum oxide (Al2O3) and a thin underlying SiO2 layer fabricated on n-type 4H-SiC substrates showed a positive Vfb shift due to substrate electron injection depending on the applied gate bias and the thickness of the SiO2 interlayer. This large Vfb shift was greatly suppressed for devices with AlON/SiO2 stacked gate dielectrics, suggesting that electron trapping sites in Al2O3 film were mostly compensated for by nitrogen incorporation. This finding is helpful in realizing highly reliable SiC-based MIS field-effect-transistors (MISFETs) in terms of threshold voltage stability.