Simultaneous formation of p- and n-type ohmic contacts to 4H-SiC using the ternary Ni/Ti/Al system
Simultaneous formation of p- and n-type ohmic contacts to 4H-SiC using the ternary Ni/Ti/Al system
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DOI：
10.1007/s11664-005-0255-6
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发表时间：
2005-10
影响因子：
2.1
通讯作者：
S. Tsukimoto;T. Sakai;T. Onishi;Kazuhiro Ito;M. Murakami
中科院分区：
文献类型：
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作者：
S. Tsukimoto;T. Sakai;T. Onishi;Kazuhiro Ito;M. Murakami
通过在 p 阱和 n 源极区域上同时形成（即相同的接触材料和一步退火）欧姆接触，可以改进碳化硅功率金属氧化物半导体场效应晶体管 (MOSFET) 的制造工艺。通过研究不同成分的三元 Ni/Ti/Al 材料，我们成功同时形成了 p 型和 n 型 SiC 半导体的欧姆接触，其中斜线符号“/”表示从 Ni 开始的沉积顺序。 Ni(20 nm)/Ti(50 nm)/Al(50 nm)组合在800°C退火30分钟后，p型和n型SiC的比接触电阻分别为2 × 10−3Ω-cm2和2 × 10−4Ω-cm2，其中SiC衬底中Al的掺杂水平为4.5 × 1018cm−3，N的水平为1.0× 1019cm−3。
Fabrication procedures for silicon carbide power metal oxide semiconductor field effect transistors (MOSFETs) can be improved through simultaneous formation (i.e., same contact materials and one step annealing) of ohmic contacts on both the p-well and n-source regions. We have succeeded with the simultaneous formation of the ohmic contacts for p- and n-type SiC semiconductors by examining ternary Ni/Ti/Al materials with various compositions, where a slash symbol “/” indicates the deposition sequence starting with Ni. The Ni(20 nm)/Ti(50 nm)/Al(50 nm) combination provided specific contact resistances of 2 × 10−3Ω-cm2and 2 × 10−4Ω-cm2for p- and n-type SiC, respectively, after annealing at 800°C for 30 min, where the doping level of Al in the SiC substrate was 4.5 × 1018cm−3and the level of N was 1.0 × 1019cm−3.