A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs
A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs
复制标题
硅 RF LDMOS FET 的新型动态电热非线性模型
DOI：
10.1109/mwsym.1999.779792
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
Washiagton Crmhg
中科院分区：
文献类型：
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作者：
R. Curtice;J.;Pla;D. Bridges;T. Lmng;EE Shumate;R. C. Consdting;Washiagton Crmhg
描述了摩托罗拉 LDMOS 晶体管新模型的开发和行为。该模型包括自热效应，可生成精确的小信号模拟以及大信号、谐波平衡模拟，并且还可以在瞬态模式下运行。它比以前的模型更简单，但它可以准确预测混合信号效应，例如互调失真。
The development and behavior of a new model for Motorola's LDMOS transistor is described. The model includes self-heating effects, produces accurate small-signal simulations as well as large-signal, harmonic-balance simulations and also operates in the transient mode. It is simpler than previous models, yet it accurately predicts mixed signal effects, such as intermodulation distortion.