High Frequency Leakage Current Caused by the Transistor Module and Its Suppression Technique
High Frequency Leakage Current Caused by the Transistor Module and Its Suppression Technique
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晶体管模块引起的高频漏电流及其抑制技术
DOI：
10.1541/ieejias.116.758
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发表时间：
1996
影响因子：
--
通讯作者：
J. Hirose
中科院分区：
文献类型：
--
作者：
Toshihisa Shimizu;G. Kimura;J. Hirose
近年来，电磁干扰（EMI）和高频泄漏电流是供电当局严重关注的问题。由于大电流、高电压的快速切换，干扰发射是许多开关电源电路中的一个严重问题。然而，高频开关是必要的，以减少尺寸和提高性能的产品。通常，EMI噪声降低是通过使用EMI滤波器和屏蔽产品来实现的。但是，在许多情况下，这些试验结果并不令人满意，因为没有进行分析调查。近年来，对PWM逆变器共模电压阶跃变化引起的高频漏电流进行了分析。但高频漏电流的另一个原因一直没有得到明确的解释，本文从理论上阐明了高频漏电流是由热沉与开关半导体器件之间的寄生电容引起的。此外，本文还表明，在高频范围内均衡寄生电容和增加散热器接地阻抗可以降低高频漏电流。最后，通过仿真和实验验证了这些结果。
Recently, Electro-Magnetic Interference (EMI) and high frequency leakage current are grave concern for power supply authorities. Due to rapid switching of high current and high voltage, interference emission is a serious problem in many switching power circuit. However, high frequency switching is neccesary for the reduction of size and the improvement of performance of the products. Usually, EMI noise reduction is tried to accomplish by using EMI filters and shielding products. But, in many cases, those trial resulted in unsatisfactory because the analytical investigation was not performed. Recently, the analysis of high-frequency leakage currnt caused by the step change of common mode voltage produced by the PWM inverter was reported. But the other cause of high-frequency leakage current did not being made clear.In this paper, it is clarified theoretically that the parasitic capacitor between the heat-sink and the switching semiconductor devices cause high-frequency leakage current. Furthermore, this paper shows that equalization of the parasitic capacitors and increase of the impedance for grounding the heat-sink at high-frequency range makes high-frequency leakage current reduce. Finaly, those results are verified from simulation and bread board set-up.