Fabrication of Ultrathin Bi2S3 Nanosheets for High-Performance, Flexible, Visible-NIR Photodetectors
Fabrication of Ultrathin Bi2S3 Nanosheets for High-Performance, Flexible, Visible-NIR Photodetectors
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用于高性能、柔性、可见光-近红外光电探测器的超薄 Bi2S3 纳米片的制造
DOI：
10.1002/smll.201403508
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发表时间：
2015-06-24
期刊：
影响因子：
13.3
通讯作者：
Yang, Qing
中科院分区：
文献类型：
--
作者：
Chen, Guihuan;Yu, Yongqiang;Yang, Qing
制备了厚度为2.2nm的超薄Bi 2S 3纳米片。结果表明，该材料对405 ~ 780 nm的可见光和近红外光具有很高的灵敏度，外光响应率高达4.4 AW（-1），探测率高达100 × 10（11）Jones，响应时间为100 × 10 μs，并具有良好的柔韧性和耐久性。
Ultrathin Bi2 S3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi2 S3-based photoconductor shows high sensitivity to visible-near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 AW (-1), high detectivity of≈ 10 (11) Jones, relatively fast response time of≈ 10 μs, and high flexibility and durability.