Room-temperature ferromagnetism in ion-implanted Co-doped TiO2(110) rutile
Room-temperature ferromagnetism in ion-implanted Co-doped TiO2(110) rutile
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DOI:
10.1063/1.1753652
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发表时间:
2004-05
影响因子:
4
通讯作者:
V. Shutthanandan;S. Thevuthasan;S. Heald;T. Droubay;M. Engelhard;T. Kaspar;D. Mccready;L. Saraf;S. Chambers;B. Mun;N. Hamdan;P. Nachimuthu;B. Taylor;R. Sears;B. Sinković
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文献类型:
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作者:
V. Shutthanandan;S. Thevuthasan;S. Heald;T. Droubay;M. Engelhard;T. Kaspar;D. Mccready;L. Saraf;S. Chambers;B. Mun;N. Hamdan;P. Nachimuthu;B. Taylor;R. Sears;B. Sinković
Ferromagnetic Co-doped rutile TiO2 single crystals were synthesized by high-temperature ion implantation and characterized by a variety of techniques. Co is uniformly distributed to a depth of ∼300 nm with an average concentration of ∼2 at. %, except in the near-surface region, where the concentration is ∼3 at. %. Ferromagnetic behavior is exhibited at room temperature with an effective saturation magnetization of ∼0.6 μB/Co atom. The Co is in a formal oxidation state of +2 throughout the implanted region, and no Co(O) is detected.