Chemical defects and electron trapping relevant to cable dielectrics
Chemical defects and electron trapping relevant to cable dielectrics
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与电缆电介质相关的化学缺陷和电子捕获
DOI：
10.1109/ceidp.2002.1048759
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
M. Meunier
中科院分区：
文献类型：
--
作者：
A. Campus;P. Carstensen;A. Farkas;M. Meunier
化学缺陷和杂质被认为是导致聚合物绝缘材料（例如过氧化物交联聚乙烯（XLPE））中电荷载流子深度捕获的原因。这种多余的电荷，称为空间电荷，可能会导致局部高电应力，可能导致在直流电压应用下的介电击穿。电缆中发现的化学缺陷和杂质是为交联工艺技术设计的不同化合物所固有的。在这项研究中，陷阱能量的范围内的化学物种相关的工业电缆计算。陷阱深度是使用量子力学工具，即密度泛函理论（DFT）。用密度泛函理论计算了化合物的电子亲合势。然后，电子亲和势和陷阱深度之间的关系。计算已经进行了孤立的分子，以及包括聚合物环境的影响。
Chemical defects and impurities are thought to be responsible for the deep trapping of charge carriers in polymeric insulating materials such as peroxide crosslinked polyethylene (XLPE). Such excess charges, referred to as space charges, might cause localised high electric stress, possibly leading to dielectric breakdown under DC voltage application. Chemical defects and impurities found in electrical cables are inherent to the different compounds designed for the crosslinking process technology. In this study, the trap energy of a range of chemical species relevant to industrial electrical cables is computed. The trap depth is obtained using quantum mechanical tools, namely the Density Functional Theory (DFT). The DFT is employed to compute the electron affinity of the compounds. Then, a relation between electron affinity and trap depth is employed. Calculations have been performed for isolated molecules as well as including the effect of a polymeric environment.