Negative Anisotropic Magnetoresistance in Fe4N Film
Negative Anisotropic Magnetoresistance in Fe4N Film
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DOI：
10.1143/apex.2.083001
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发表时间：
2009-07
影响因子：
2.3
通讯作者：
M. Tsunoda;Yosuke Komasaki;S. Kokado;S. Isogami;Che-Chin Chen;M. Takahashi
中科院分区：
文献类型：
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作者：
M. Tsunoda;Yosuke Komasaki;S. Kokado;S. Isogami;Che-Chin Chen;M. Takahashi
在4.2 ~ 300 K温度范围内，Fe 4 N薄膜出现负各向异性磁电阻（AMR）。AMR比随温度升高，在50 K附近以阶梯方式，并伴随着在磁化滞后的变化。将坎贝尔和Fert模型推广到研究传导电子自旋极化对AMR的影响，发现在铁磁体中多数自旋传导时没有观察到负AMR.因此，可以得出结论，在本研究中观察到的负AMR可能是明确的证据，少数自旋导电的Fe 4 N薄膜，从理论上预测。
Negative anisotropic magnetoresistance (AMR) is observed in Fe4N film from 4.2 to 300 K. The AMR ratio rises with temperature in a stepwise fashion near 50 K, and is accompanied by a change in the magnetization hysteresis. The Campbell and Fert model is extended to investigate the influence of spin-polarization of conduction electrons on the AMR, and it is found that the negative AMR is not observed for majority spin conduction in ferromagnets. Consequently, it is concluded that the negative AMR that observed in the present study is possibly clear evidence of minority spin conduction in Fe4N film, as is predicted theoretically.