A new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance
A new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance
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DOI：
10.1109/55.79565
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发表时间：
1991-05
影响因子：
4.9
通讯作者：
M. Nandakumar;B. Baliga;M. S. Shekar;S. Tandon;A. Reisman
中科院分区：
文献类型：
--
作者：
M. Nandakumar;B. Baliga;M. S. Shekar;S. Tandon;A. Reisman
本文介绍了一种新型MOS门控功率晶闸管结构，称为基极电阻控制晶闸管（BRT）。在这种结构中，具有N-漂移区的晶闸管的关断是通过在MOS-栅极控制下减小P-基极区的电阻来实现的。与以前的器件相比，P沟道MOSFET集成在N-漂移区用于此目的。它已被证明，通过二维数值模拟和实验测量使用七掩模工艺制造的器件，具有600 V正向阻断能力的器件可以实现与晶闸管的正向压降接近。在很宽的电流密度范围内，晶闸管的关断能力已得到验证。>
A new MOS-gated power thyristor structure, called the base-resistance-controlled thyristor (BRT), is described. In this structure, the turn-off of a thyristor with an N-drift region is achieved by reducing the resistance of the P-base region under MOS-gate control. In contrast with previous devices, a P-channel MOSFET integrated in the N-drift region is used for this purpose. It has been shown, by two-dimensional numerical simulations and experimental measurements on devices fabricated using a seven-mask process, that devices with 600-V forward blocking capabilities can be achieved with a forward drop close to that for a thyristor. The ability to turn off the thyristor current flow has been verified over a broad range of current densities.>