The Trench Power MOSFET-Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability
The Trench Power MOSFET-Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability
复制标题
DOI：
10.1109/ted.2017.2655149
复制
发表时间：
2017-03-01
影响因子：
3.1
通讯作者：
Kawaguchi, Yusuke
中科院分区：
文献类型：
--
作者：
Williams, Richard K.;Darwish, Mohamed N.;Kawaguchi, Yusuke
介绍了专用VDMOS和横向沟槽功率MOSFET的技术发展。与通用沟槽垂直DMOS不同，专用沟槽DMOS包括针对特定功能或特性合并或优化的器件。示例包括双向锂离子电池断开开关、具有安全冗余的安全气囊引爆器驱动器、具有重复雪崩操作的防抱死制动系统螺线管驱动器以及各种形式的同步整流器（包括集成肖特基和伪肖特基操作）。横向沟槽DMOS包括所有注入准垂直、横向沟槽和横向沟槽电荷平衡器件.沟槽式powerMOSFET封装可实现多芯片表面贴装、DrMOS、低电感和夹形引脚封装。
The technological development of application specific VDMOS and lateral trench power MOSFETs is described. Unlike general-purpose trench vertical DMOS, application specific trench DMOS comprise devices merged or optimized for a specific function or characteristic. Examples include the bidirectional lithium ion battery disconnect switch, the airbag squib driver with safety redundancy, the antilock breaking systems solenoid driver with repeated avalanche operation, and various forms of synchronous rectifiers (including integrated Schottky and pseudo- Schottky operation). Trench lateral DMOS include all implant quasi- vertical, lateral trench, and lateral trench charge balanced devices. Trench powerMOSFET packaging addresses multichip surface mount, DrMOS, low inductance, and clip lead packages.