Work Function Modulation by Segregation of Indium through Tungsten Gate for Dual-Metal-Gate Complementary Metal Oxide Semiconductor Applications
Work Function Modulation by Segregation of Indium through Tungsten Gate for Dual-Metal-Gate Complementary Metal Oxide Semiconductor Applications
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DOI：
10.1143/jjap.46.1885
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发表时间：
2007-04
影响因子：
1.5
通讯作者：
K. Nakajima;M. Koyama;T. Aoyama;A. Nishiyama;K. Eguchi;K. Suguro
中科院分区：
文献类型：
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作者：
K. Nakajima;M. Koyama;T. Aoyama;A. Nishiyama;K. Eguchi;K. Suguro
我们提出通过 W 栅电极分离铟来调节功函数。我们研究了使用 W/In/W 堆叠栅极的金属氧化物半导体 (MOS) 电容器的电特性。通过在 N2 环境中 600 °C 的热退火，与 W 栅极相比，W/In/W 堆叠栅极的平带电压 (Vfb) 向~550 mV 的负栅极偏压移动。发现W/In/W堆叠栅极结构中功函数的变化是由于铟通过W晶界偏析到W栅电极和栅极绝缘体之间的界面而造成的。我们成功地演示了通过铟偏析技术将 W 栅电极的功函数从 4.8 eV 调制到 4.1 eV。
We propose work function modulation by the segregation of indium through a W gate electrode. We studied the electrical properties of a metal oxide semiconductor (MOS) capacitor using a W/In/W stacked gate. By thermal annealing at 600 °C in N2 ambient, the flatband voltage (Vfb) of W/In/W stacked gate shifts toward a negative gate bias of ∼550 mV, compared with the W gate. The change in the work function in the W/In/W stacked gate structure is found to be due to indium segregation to the interface between the W gate electrode and the gate insulator through the W grain boundary. We successfully demonstrate work function modulation of the W gate electrode from 4.8 to 4.1 eV by the indium segregation technique.