Resistance switching memory characteristics of CaF2/Si/CaF2 resonant-tunneling quantum-well heterostructures sandwiched by nanocrystalline Si secondary barrier layers
Resistance switching memory characteristics of CaF2/Si/CaF2 resonant-tunneling quantum-well heterostructures sandwiched by nanocrystalline Si secondary barrier layers
复制标题
夹有纳米晶硅二次势垒层的 CaF2/Si/CaF2 谐振隧道量子阱异质结构的电阻切换存储特性
DOI：
10.7567/apex.9.074001
复制
发表时间：
2016
影响因子：
2.3
通讯作者：
Masahiro Watanabe
中科院分区：
文献类型：
--
作者：
Y. Kuwata;K. Suda;Masahiro Watanabe
提出了一种新型的电阻开关存储器，该存储器采用CaF 2/Si/CaF 2共振隧穿量子阱异质结构，中间夹有纳米晶Si（nc-Si）作为第二势垒层，并研究了其基本的室温电流-电压特性。观察到1.0V的电阻转换电压、约42 kA/cm 2的峰值电流密度和2.8的导通/关断比。特别是，超过28000写-读-擦除循环存储器操作已被证明通过施加脉冲输入电压序列，这表明更好的耐久性比使用CaF 2/CdF 2/CaF 2异质结构的设备。
A novel resistance switching memory using CaF2/Si/CaF2 resonant-tunneling quantum well heterostructures sandwiched by nanocrystalline Si (nc-Si) as secondary barrier layers has been proposed and the room temperature current–voltage characteristics of the basic resistance switching memory operation have been demonstrated. A resistance switching voltage of 1.0 V, a peak current density of approximately 42 kA/cm2, and an ON/OFF ratio of 2.8 were observed. In particular, more than 28000 write-read-erase cyclic memory operations have been demonstrated by applying pulsed input voltage sequences, which suggests better endurance than the device using a CaF2/CdF2/CaF2 heterostructure.