Preparation and phase transition properties of Ti-doped VO2 films by sol-gel process
Preparation and phase transition properties of Ti-doped VO2 films by sol-gel process
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溶胶-凝胶法制备Ti掺杂VO2薄膜及其相变性能
DOI：
10.1007/s10971-015-3913-z
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发表时间：
2016-04-01
影响因子：
2.5
通讯作者：
Lu, Tiecheng
中科院分区：
文献类型：
--
作者：
Hu, Yanyan;Shi, Qiwu;Lu, Tiecheng
采用无机溶胶-凝胶法在白云母衬底上制备了纯的和钛掺杂的二氧化钒薄膜。采用X射线衍射、X射线光电子能谱、扫描电镜和原位红外光谱等手段对薄膜的结晶度、化学计量比、表面形貌和相变特性进行了研究。结果表明，所制备的VO 2薄膜均为多晶结构，具有（011）择优取向。但Ti掺杂对薄膜的形貌有显著影响，从而导致薄膜的相变特性发生变化。特别地，通过增加Ti的掺杂浓度，相变温度升高（从纯膜的61 A ℃到掺杂2.8at.%的膜的71.5A ℃Ti），滞后回线同时减小。本研究提出了一种制备掺钛VO 2薄膜的新方法，并由于其独特的相变特性，为掺钛VO 2薄膜的应用提供了重要的参考。
Pure and Ti-doped vanadium dioxide (VO2) thin films were deposited on muscovite substrates using an inorganic sol-gel method. The crystallinity, stoichiometry, surface morphology and phase transition properties of the films were investigated using X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscope and in situ FTIR measurement, respectively. The results indicated that all the VO2 films exhibited polycrystalline structure, with a (011) preferred orientation. But Ti doping affected the morphology of the films remarkably, which then led to varied phase transition properties. Particularly, the phase transition temperature elevated by increasing the doping concentration of Ti (from 61 A degrees C for pure film to 71.5 A degrees C for the film doped with 2.8 at.% Ti), and the hysteresis loop decreased simultaneously. This study proposed a new method to prepare Ti-doped VO2 film and provided considerable insights for the application of Ti-doped VO2 film due to its unique phase transition properties.