Improvement of Thermal Process Tolerance of Directly Bonded GaInAsP/SOI Wafer by Stressed SiNx Deposition
Improvement of Thermal Process Tolerance of Directly Bonded GaInAsP/SOI Wafer by Stressed SiNx Deposition
复制标题
通过应力 SiNx 沉积提高直接键合 GaInAsP/SOI 晶圆的热加工耐受性
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
“Improvement of Thermal Process Tolerance of Directly Bonded GaInAsP/SOI Wafer by Stressed SiNx Deposition
中科院分区：
文献类型：
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作者：
S. Inoue;H. Shovon;J. Suzuki;Y. Hayashi;T. Amemiya;N. Nishiyama;and S. Arai;“Improvement of Thermal Process Tolerance of Directly Bonded GaInAsP/SOI Wafer by Stressed SiNx Deposition
