Voltage-controlled active mid-infrared plasmonic devices
Voltage-controlled active mid-infrared plasmonic devices
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DOI：
10.1063/1.3600230
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发表时间：
2011-06
影响因子：
3.2
通讯作者：
K. Anglin;T. Ribaudo;D. Adams;X. Qian;W. Goodhue;S. Dooley;E. Shaner;D. Wasserman
中科院分区：
文献类型：
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作者：
K. Anglin;T. Ribaudo;D. Adams;X. Qian;W. Goodhue;S. Dooley;E. Shaner;D. Wasserman
我们展示了中红外等离子体结构的主动电压控制光谱调谐。在n掺杂的GaAs薄膜上，用HfO2栅极介电介质在光栅和掺杂半导体之间制备了超常规光传输光栅。在栅极上施加反向偏压，耗尽栅极下的载流子，从而调整了砷化镓的介电常数。对器件进行了电学和光学表征，实现了共振透射峰光谱和透射强度的位移。讨论了演示技术的可能应用和局限性。
We demonstrate active voltage-controlled spectral tuning of mid-infrared plasmonic structures. Extraordinary optical transmission gratings were fabricated on n-doped GaAs epilayers with a HfO2 gate dielectric between the grating and the doped semiconductor. The permittivity of the GaAs was tuned by depleting charge carriers below the top grating gate upon the application of a reverse bias to the gate. Devices were characterized both electrically and optically, and resonant transmission peak spectral and transmitted intensity shifts were achieved. Possible applications for, as well as the limitations of, the demonstrated technology are discussed.