Large in-plane piezo-strain enhanced voltage control of magnetic anisotropy in Si-compatible multiferroic thin films.
Large in-plane piezo-strain enhanced voltage control of magnetic anisotropy in Si-compatible multiferroic thin films.
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DOI：
10.1039/d2mh01020h
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发表时间：
2022-10
影响因子：
13.3
通讯作者：
Bin Peng;Q. Lu;Hao Tang;Yao Zhang;Yuxin Cheng;Ruibin Qiu;Yunting Guo;Ziyao Zhou;Meilin Liu
中科院分区：
文献类型：
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作者：
Bin Peng;Q. Lu;Hao Tang;Yao Zhang;Yuxin Cheng;Ruibin Qiu;Yunting Guo;Ziyao Zhou;Meilin Liu
硅兼容铁电/铁磁多铁性薄膜的电压控制磁各向异性（VCMA）有望实现功率效率和集成磁存储器。然而，它们的VCMA效应很弱，并且总是小于体相对应物。在这里，我们实现了更实质性的VCMA效应在薄膜中比在散装，受益于大的面内压电应变介导的磁电耦合下的强场。制备了具有高达3.2 MV cm-1的击穿强度的Si兼容铁电Pb（Zr，Ti）O3（PZT）薄膜，进一步构建了多铁性薄膜。针对传统方法无法测量强场下VCMA效应的问题，建立了一种基于微加工的微铁磁共振测量方法。PZT/CoFeB薄膜表现出了增强的VCMA效应，其电压感应有效磁场（Heff）实验可达26.1 Oe，远强于体控样品“PZT陶瓷/CoFeB”（2.6 Oe）和“PMN-PT单晶/CoFeB”（18.5 Oe）以及之前的报道。理论上，薄膜中的Heff可以在击穿强度附近大于60 Oe，这是由于巨大的面内压应变S31 <-0.3%所致，这与最好的铁电单晶相当。具有增强的VCMA的Si兼容多铁性薄膜将为开发集成磁性和自旋电子器件提供有用的平台。
Voltage control of magnetic anisotropy (VCMA) in Si-compatible ferroelectric/ferromagnetic multiferroic thin films is promising to enable power-efficient and integrated magnetic memories. However, their VCMA effect is weak and is always smaller than that of the bulk counterparts. Here, we achieve a more substantial VCMA effect in thin films than in the bulk, benefiting from the large in-plane piezo-strain mediated magnetoelectric coupling under strong fields. Si-compatible ferroelectric Pb(Zr,Ti)O3 (PZT) thin films with large breakdown strength of up to 3.2 MV cm-1 are fabricated to further construct multiferroic thin films. Since conventional methods fail to measure the VCMA effect under strong fields, we establish a micro-ferromagnetic resonance method based on micro-fabrication. An enhanced VCMA effect is demonstrated in PZT/CoFeB thin films, whose voltage-induced effective magnetic field (Heff) could experimentally reach 26.1 Oe, which is much stronger than that in bulk control samples "PZT ceramic/CoFeB" (2.6 Oe) and "PMN-PT single crystal/CoFeB" (18.5 Oe) as well as previous reports. Theoretically, the Heff in thin films could be > 60 Oe near the breakdown strength, resulting from a giant in-plane piezo-strain S31 < -0.3%, which is comparable to that of the best ferroelectric single crystals. Si-compatible multiferroic thin films with enhanced VCMA will be a useful platform for developing integrated magnetic and spintronic devices.