Enhancement of Spin Lifetime in Gate-Fitted InGaAs Narrow Wires
Enhancement of Spin Lifetime in Gate-Fitted InGaAs Narrow Wires
复制标题
DOI：
10.1103/physrevlett.102.226601
复制
发表时间：
2009-06-05
影响因子：
8.6
通讯作者：
Nitta, Junsaku
中科院分区：
文献类型：
--
作者：
Kunihashi, Yoji;Kohda, Makoto;Nitta, Junsaku
我们通过磁输运测量研究了装有栅极的 InGaAs 窄线的自旋寿命。施加正栅极偏压后，窄导线中的自旋寿命比使用二维电子气的霍尔棒样品获得的自旋寿命长了一个数量级以上。门控线中自旋寿命的增强是由栅极偏置电压控制的尺寸限制和共振自旋轨道相互作用效应的第一个实验证据。在目前的 InGaAs 线中，由立方 Dresselhaus 项引起的自旋弛豫可以忽略不计。
We investigated the spin lifetime in gate-fitted InGaAs narrow wires from magnetotransport measurement. Applying positive gate bias voltage, the spin lifetimes in narrow wires became more than one order longer than those obtained from a Hall bar sample with two-dimensional electron gas. This enhancement of spin lifetime in gated wires is the first experimental evidence of dimensional confinement and resonant spin-orbit interaction effect controlled by gate bias voltage. Spin relaxation due to the cubic Dresselhaus term is negligible in the present InGaAs wires.