Visibility and Raman spectroscopy of mono and bilayer graphene on crystalline silicon
Visibility and Raman spectroscopy of mono and bilayer graphene on crystalline silicon
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DOI：
10.1063/1.3323105
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发表时间：
2010-02
影响因子：
4
通讯作者：
E. B. Song;B. Lian;Guangyu Xu;Bo Yuan;C. Zeng;Amber Chen;Minsheng Wang;Sung Min Kim;M. Lang;Yi Zhou;Kang L. Wang
中科院分区：
文献类型：
--
作者：
E. B. Song;B. Lian;Guangyu Xu;Bo Yuan;C. Zeng;Amber Chen;Minsheng Wang;Sung Min Kim;M. Lang;Yi Zhou;Kang L. Wang
原始石墨烯器件的实验研究目前依赖于这样的事实，即当下面的衬底被设计成表现出高对比度时，石墨烯微晶可以在光学显微镜下可见。在这里，我们提出，石墨烯不仅可以在电介质衬底上，而且可以在绝缘体上硅（SOI）晶片（SIMOX和键合）的结晶Si表面上可视化，其中Si厚度为70 nm，掩埋氧化物厚度为140 nm，使用单色照明。此外，我们已经发现，拉曼光谱显示出类似的功能，以标准的二氧化硅衬底上的石墨烯的Si表面的极性无关。最后，由于石墨烯对SOI的干涉增强效应，SOI上的拉曼光谱表现出比体硅上更高的强度。因此，使用光学显微镜和拉曼光谱检测，定位和表征石墨烯作为一种高通量的方法，以进一步研究石墨烯的半导体系统和其他基板。
Experimental studies of pristine graphene devices currently rely on the fact that the graphene crystallites can be visible under optical microscopes when the underlying substrate is engineered to exhibit high contrast. Here, we present that graphene can be visualized not only on a dielectric substrate but also on a crystalline Si surface of a silicon-on-insulator (SOI) wafer (SIMOX and Bonded) with thicknesses of Si ∼70 nm and buried oxide ∼140 nm, using monochromatic illumination. In addition, we have found that Raman spectroscopy shows similar features to standard graphene on SiO2 substrates independent of the polarity of the Si surface. Finally, the Raman spectrum on SOI exhibits a higher intensity compared to that on bulk Si due to the interference enhancement effect of graphene on SOI. Thus, the usage of optical microscopy and Raman spectroscopy for detecting, locating, and characterizing graphene serves as a high throughput method to further study graphene on semiconductor systems and other substrat...