Effects of Selective Phosphoric Acid Etching on Enamel Using "No-wait" Self-etching Adhesives
Effects of Selective Phosphoric Acid Etching on Enamel Using "No-wait" Self-etching Adhesives
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DOI:
10.3290/j.jad.a41359
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发表时间:
2018-09-01
影响因子:
3.3
通讯作者:
Tagami, Junji
中科院分区:
文献类型:
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作者:
Sato, Takaaki;Takagaki, Tomohiro;Tagami, Junji
Purpose: To evaluate the effect of selective phosphoric acid etching on enamel using "no-wait" self-etching adhesives.Materials and Methods: Clearfil Universal Bond Quick (UBQ, Kuraray Noritake) or G-Premio BOND (GPB, GC) was applied to ground human enamel surfaces. The adhesives were used in 3 modes: no-waiting self-etching mode (UBQ-0 or GPB-0), 10-s self-etching mode (UBQ-10 or GPB-10), and the selective-etch mode with phosphoric acid etching (UBQ-PA or GPB-PA). After an acid-base challenge, the morphological attributes of the interface were examined using scanning electron microscopy (SEM) to characterize the acid-base resistant zone (ABRZ). Microshear bond strength (mu SBS) testing to enamel and ultimate tensile strength (UTS) of the adhesive resin were carried out.Results: ABRZ formation was confirmed in all groups. UBQ-PA and GPB-PA created thicker ABRZ with no funnel-shaped erosion beneath the adhesive-enamel interface. mu SBS of UBQ-PA was significantly higher than UBQ-0 and UBQ-10 (p < 0.05). However, there were no statistically signficant differences in mu SBS among GPB-0, GPB-10, and GPB-PA. For the UTS, UBQ was significantly higher than GPB.Conclusion: Selective phosphoric acid etching created a stable adhesive-enamel interface. The no-waiting self-etching concept adhesive led to a thinner ABRZ. The results of mu SBS suggest that phosphoric acid etching effects on enamel are material dependent.