Epitaxial MgO layer for low-resistance and coupling-free magnetic tunnel junctions
Epitaxial MgO layer for low-resistance and coupling-free magnetic tunnel junctions
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用于低电阻和无耦合磁隧道结的外延 MgO 层
DOI：
10.1063/1.1498153
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发表时间：
2002
影响因子：
4
通讯作者：
V. D. Costa
中科院分区：
文献类型：
--
作者：
E. Popova;J. Faure;C. Tiușan;C. Bellouard;H. Fischer;M. Hehn;F. Montaigne;M. Alnot;S. Andrieu;A. Schuhl;E. Snoeck;V. D. Costa
用分子束外延技术制备了MgO（100）/Fe/MgO/Fe/Co/Pd磁性隧道结，绝缘层厚度为0.8nm。通过形态学（高分辨率透射电子显微镜），电（局部阻抗）和磁（磁阻和磁滞回线）测量，在不同的空间尺度检查该层的连续性。这些结显示出低电阻（4 kΩ μm2）、高达17%的隧道磁阻和非常小的层间磁耦合。
Epitaxially grown magnetic tunnel junctions MgO(100)/Fe/MgO/Fe/Co/Pd have been elaborated by molecular beam epitaxy, with insulating layer thickness down to 0.8 nm. The continuity of this layer was checked at different spatial scales by means of morphological (high resolution transmission electronic microscopy), electric (local impedance), and magnetic (magnetoresistance and hysteresis loop) measurements. These junctions show a low resistance (4 kΩ μm2), tunnel magnetoresistance up to 17%, and a very small interlayer magnetic coupling.