Core-shell nanowire light-emitting diodes
Core-shell nanowire light-emitting diodes
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DOI：
10.1002/adma.200401235
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发表时间：
2005-03-22
影响因子：
29.4
通讯作者：
Bell, DC
中科院分区：
文献类型：
--
作者：
Hayden, O;Greytak, AB;Bell, DC
采用脉冲激光沉积法在硅纳米线表面包覆硫化镉壳层，制备了核壳型半导体纳米线异质结构。由此产生的异质结构用于制造光刻定义的线内p-n结通过选择性蚀刻工艺（见图）。我们提出的结构数据和验证的概念建设线内发光二极管。
Core-shell semiconductor nanowire heterostructures are fabricated using pulsed-laser deposition to coat silicon nanowires with a cadmium sulfide shell. The resulting heterostructures are used to fabricate lithographically defined intrawire p-n junctions via a selective etching process (see Figure). We present structural data and a proof-of-concept construction of intrawire light-emitting diodes.