Direct coupling of pulsed radio frequency and pulsed high power in novel pulsed power system for plasma immersion ion implantation.
Direct coupling of pulsed radio frequency and pulsed high power in novel pulsed power system for plasma immersion ion implantation.
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DOI：
10.1063/1.2906220
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发表时间：
2008-04
期刊：
影响因子：
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通讯作者：
C. Gong;X. Tian;Shiqin Yang;R. Fu;P. Chu
中科院分区：
文献类型：
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作者：
C. Gong;X. Tian;Shiqin Yang;R. Fu;P. Chu
一种新型的电源系统，直接耦合脉冲高压（HV）脉冲和脉冲13.56 MHz的射频（RF）已开发的等离子体工艺。在该系统中，样品保持器连接到射频发生器和HV调制器。混合系统中的耦合电路由独立的匹配单元、低通滤波器和电压箝位单元组成。利用PSPICE软件对电路进行了优化设计。该系统可以在两种模式下运行。脉冲射频放电既可以作为辉光放电的种子等离子体源，也可以作为等离子体浸没离子注入（PIII）的高密度等离子体源。当使用具有短持续时间或在rf和HV脉冲之间的较大时间间隔的rf脉冲时，诱发脉冲高压辉光放电。也可以实现常规PIII。实验结果表明，该系统运行稳定、安全。
A novel power supply system that directly couples pulsed high voltage (HV) pulses and pulsed 13.56 MHz radio frequency (rf) has been developed for plasma processes. In this system, the sample holder is connected to both the rf generator and HV modulator. The coupling circuit in the hybrid system is composed of individual matching units, low pass filters, and voltage clamping units. This ensures the safe operation of the rf system even when the HV is on. The PSPICE software is utilized to optimize the design of circuits. The system can be operated in two modes. The pulsed rf discharge may serve as either the seed plasma source for glow discharge or high-density plasma source for plasma immersion ion implantation (PIII). The pulsed high-voltage glow discharge is induced when a rf pulse with a short duration or a larger time interval between the rf and HV pulses is used. Conventional PIII can also be achieved. Experiments conducted on the new system confirm steady and safe operation.