Growth of Pyrochlore Bi2Ti2O7 Epitaxial Films and Their Electrical Characterization
Growth of Pyrochlore Bi2Ti2O7 Epitaxial Films and Their Electrical Characterization
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烧绿石 Bi2Ti2O7 外延膜的生长及其电学表征
DOI：
10.1080/10584580490899082
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发表时间：
2004
影响因子：
0.7
通讯作者：
H. Funakubo
中科院分区：
文献类型：
--
作者：
Muneyasu Suzuki;Takayuki Watanabe;T. Takenaka;H. Funakubo
研究了在金红石型衬底上外延生长Bi2Ti2O7薄膜的条件。采用具有相同金红石型结构的二氧化钛单晶和导电外延层IrO2作为衬底进行薄膜沉积。X射线衍射仪θ-2θ扫描证实在(110)Ti02衬底上沉积了强(111)择优取向的Bi2Ti2O7薄膜，但在(100)、(001)和(110)TiO2衬底上没有观察到明显的取向。在(100)，(001)和(110)二氧化钛衬底上观察到了Bi2Ti2O7薄膜的外延生长，在(100)和(110)二氧化钛衬底上观察到两种不同的外延生长。外延关系如下：(14~14 19)Bi2Ti2O7//(100)TiO2.(112)Bi2Ti2O7//(101)TiO2.(111)Bi2Ti2O7//(110)TiO2.同样的外延生长只在(110)IrO2//(110)TiO2衬底上得到证实，而在(101)IrO2//(012)Al_2O_3和(100)IrO2//(100)TiO_2衬底上没有发现。在(110)IrO2//(110)TiO2衬底上生长的厚度为130 nm的Bi2Ti2O7薄膜在1 kHz处的介电常数和损耗分别为130%和2%。
Epitaxial growth condition of Bi2Ti2O7 films on the substrates having rutile-structure was investigated. TiO2 single crystals and the conductive epitaxial IrO2layers having same rutile-structure were used as substrates for film deposition. Strongly (111)-oriented Bi2Ti2O7 films were confirmed to be deposited on (110) TiO2 substrates by XRD θ-2θ scans, but obvious orientations were not detected on (100), (001) and (110) TiO2 substrates. The epitaxial growths of Bi2Ti2O7 films were confirmed on (100), (001) and (110) TiO2 substrates, where two variants were observed on (100) and (110) TiO2 substrates. The epitaxial relationships were confirmed as follows; (14 14 19)Bi2Ti2O7//(100)TiO2, (112)Bi2Ti2O7//(101)TiO2, and (111)Bi2Ti2O7//(110)TiO2. Same epitaxial growth was confirmed only on (110)IrO2//(110)TiO2 substrate, but not on (101)IrO2//(012)Al2O3 and (100)IrO2//(100)TiO2 substrates. The dielectric constant and loss tangent at 1 kHz were 130 and 2%, respectively for the 130 nm-thick epitaxial Bi2Ti2O7 film grown on (110)IrO2//(110)TiO2 substrate.
影响因子：
3.7
作者：
Whissell PD;Tohyama S;Martin LJ
通讯作者：
Martin LJ