Production of extended single-layer graphene.
Production of extended single-layer graphene.
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DOI：
10.1021/nn103428k
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发表时间：
2011-01
期刊：
影响因子：
17.1
通讯作者：
Mingsheng Xu;D. Fujita;K. Sagisaka;E. Watanabe;N. Hanagata
中科院分区：
文献类型：
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作者：
Mingsheng Xu;D. Fujita;K. Sagisaka;E. Watanabe;N. Hanagata
石墨烯由于其独特的电子、光学、机械和其他特性，最近引起了人们的极大兴趣。我们报告了一种在低温下生产完全覆盖整个衬底的单层石墨烯的有希望的方法。通过真空加热Ni/HOPG，在高取向热解石墨（HOPG）衬底上沉积了一层2 cm ×2 cm的镍（Ni）薄膜，合成了单层石墨烯片。形成石墨烯的碳原子是从石墨衬底扩散到镍模板的。我们的研究结果展示了如何控制石墨烯形成所需的碳原子数量，以产生具有精细控制厚度和晶体结构的石墨烯薄膜。我们的方法代表了可扩展合成具有预定厚度的高质量石墨烯薄膜和实现石墨烯薄膜独特性能的重要一步。
Graphene has attracted an enormous amount of interest recently because of its unique electronic, optical, mechanical, and other properties. We report a promising method for producing single-layer graphene fully covering an entire substrate at low temperature. Single-layer graphene sheets have been synthesized on a whole 2 cm ×2 cm nickel (Ni) film deposited on a highly oriented pyrolytic graphite (HOPG) substrate by heating the Ni/HOPG in a vacuum. The carbon atoms forming our graphene are diffused from the graphite substrate through the nickel template. Our results demonstrate how to control the amount of carbon atoms for graphene formation to yield graphene films with a fine controlled thickness and crystal structure. Our method represents a significant step toward the scalable synthesis of high-quality graphene films with predefined thickness and toward realizing the unique properties of graphene films.