Current-induced metastable resistive state in epitaxial thin films of La1−xCaxMnO3 (x=0.2, 0.3)
Current-induced metastable resistive state in epitaxial thin films of La1−xCaxMnO3 (x=0.2, 0.3)
复制标题
DOI：
10.1063/1.1870128
复制
发表时间：
2005-02
影响因子：
4
通讯作者：
J. Gao;F. Hu
中科院分区：
文献类型：
--
作者：
J. Gao;F. Hu
研究了输运直流电流对La1−xCaxMnO3 （x=0.2, 0.3）外延薄膜电阻率的影响。一个最突出的发现是在远低于居里温度Tc的温度下出现一个显著的电阻峰。当超过临界值的直流电流在300至10 K的温度循环中施加时，就会产生这样的电阻峰值。电阻峰值对微弱电流极为敏感。即使很小的电流也会大大降低峰值的高度。与原始状态相比，这种具有高电阻率的电流诱导状态是亚稳态的。对诱导态的稳定性也进行了研究。
The influence of a transport dc current on electric resistivity has been investigated in epitaxial thin films of La1−xCaxMnO3 (x=0.2, 0.3). A most prominent finding is the appearance of a remarkable resistive peak at temperatures well below the Curie temperature Tc. Such a resistive peak is developed when the dc current over a critical value was applied in a temperature cycling from 300 to 10 K. The resistance peak turns out to be extremely sensitive to a weak current. Even a very small current could greatly depress the height of the peak. Such a current-induced state with high resistivity is metastable compared to the pristine state. The stability of the induced state has been also studied.