OPTICAL ACTIVATION OF ER-3+ IMPLANTED IN SILICON BY OXYGEN IMPURITIES
OPTICAL ACTIVATION OF ER-3+ IMPLANTED IN SILICON BY OXYGEN IMPURITIES
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DOI：
10.1143/jjap.29.l524
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发表时间：
1990-04-01
期刊：
影响因子：
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通讯作者：
GAUNEAU, M
中科院分区：
文献类型：
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作者：
FAVENNEC, PN;LHARIDON, H;GAUNEAU, M
本文介绍了掺Er硅的发光光谱和SIMS测量结果。在提拉法生长的硅晶体中发现了更强的发光，已知含有高达10 18厘米-3的氧中心。通过在硅的Er注入层中注入与Er相当的浓度的氧，证明了氧杂质在1.54µm发光的光学激活中所起的直接作用。讨论了光致发光增强的可能机制。
Luminescence spectra and SIMS measurements of Er-doped silicon are presented in this paper. Luminescence was found to be stronger in Czochralski-grown Si crystals, known to contain up to 10 18 cm-3 of oxygen center. Direct role played by oxygen impurities in the optical activation of the 1.54 µm luminescence was demonstrated by implanting oxygen into Er implanted layers in silicon at concentrations comparable to those of Er. Possible mechanisms of enhancement of photoluminescence are discussed.