Metastability in multicomponent oxide transistors
Metastability in multicomponent oxide transistors
复制标题
多组分氧化物晶体管的亚稳态
DOI：
10.1002/pssa.200982894
复制
发表时间：
2010
期刊：
影响因子：
--
通讯作者：
O. Kwon
中科院分区：
文献类型：
--
作者：
W. Jackson;R. Hoffman;B. Yeh;T. Emery;Tim Koch;C. McConica;O. Kwon
研究了多组分、锌铟和锌锡氧化物晶体管的偏压应力亚稳性。作为各种介质、钝化层和照明条件的函数的偏置应力表明，对于负栅偏置，通常在半导体中产生应力缺陷，可能在接近或在表面，特别是在器件未钝化的情况下。氧空位的形成是一种可能的可能性。对于许多介质，正栅偏压亚稳态似乎是由绝缘体中的电荷陷阱主导的。对于锌锡氧化物器件，亚稳性的动力学遵循与栅极电压呈幂函数关系的伸展指数行为。修正了观察到的Meyer-Neldel行为，τ产生缺陷的激活能约为1.2 eV，β的无序能约为0.06 eV。通过使用钝化、最佳栅电介质和退火工艺，我们已经将25,000 S应力在22 °C下的偏置应力亚稳性降低到约0.1 V。
Results of an investigation of bias stress metastability of multicomponent, zinc–indium and zinc–tin oxides, transistors are investigated. The bias stress as a function of various dielectrics, passivation layers, and illumination conditions indicate that for negative gate bias stressing defects often are created in the semiconductor, probably near or at the surface, particularly if the devices are unpassivated. Oxygen vacancy formation is a likely candidate. For many dielectrics, the positive gate bias metastability appears to be dominated by charge trapping within the insulator. For zinc–tin oxide devices, the kinetics of the metastability follows a stretched exponential behavior with a power law dependence on gate voltage. Correcting for the observed Meyer–Neldel behavior, the activation energy of τ is about 1.2 eV for defect generation and the disorder energy from β is about 0.06 eV. By using passivation, the best gate dielectrics and annealing protocols, we have reduced the bias stress metastability to about 0.1 V for a 25,000 s stress at 22 °C.