InAs/AlAsSb based quantum cascade detector
InAs/AlAsSb based quantum cascade detector
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DOI：
10.1063/1.4929501
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发表时间：
2015-08
影响因子：
4
通讯作者：
P. Reininger;T. Zederbauer;B. Schwarz;H. Detz;D. Macfarland;A. Andrews;W. Schrenk;G. Strasser
中科院分区：
文献类型：
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作者：
P. Reininger;T. Zederbauer;B. Schwarz;H. Detz;D. Macfarland;A. Andrews;W. Schrenk;G. Strasser
本文介绍了用于量子级联探测器（QCDs）的InAs/AlAsSb材料体系。InAs/AlAsSb可以生长成与InAs相匹配的晶格，并具有约2.1 eV的导带偏移，从而实现了超短波长的量子级联探测器的设计。使用这种材料体系的另一个好处是，阱材料的有效质量较低，从而提高了探测器的总吸收，降低了子带间散射率，从而增加了器件电阻，从而增强了噪声性能。我们设计、培养并测量了一种波长为λ = 4.84 μm的QCD，并在T = 300 K时显示出约2.7 × 107琼斯的峰值比探测率。
In this letter, we introduce the InAs/AlAsSb material system for quantum cascade detectors (QCDs). InAs/AlAsSb can be grown lattice matched to InAs and exhibits a conduction band offset of approximately 2.1 eV, enabling the design of very short wavelength quantum cascade detectors. Another benefit using this material system is the low effective mass of the well material that improves the total absorption of the detector and decreases the intersubband scattering rates, which increases the device resistance and thus enhances the noise behavior. We have designed, grown, and measured a QCD that detects at a wavelength of λ = 4.84 μm and shows a peak specific detectivity of approximately 2.7 × 107 Jones at T = 300 K.