Torsional response and dissipationless viscosity in topological insulators.
Torsional response and dissipationless viscosity in topological insulators.
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DOI：
10.1103/physrevlett.107.075502
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发表时间：
2011-01
影响因子：
8.6
通讯作者：
T. Hughes;R. Leigh;E. Fradkin
中科院分区：
文献类型：
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作者：
T. Hughes;R. Leigh;E. Fradkin
我们考虑2D和3D拓扑绝缘体（TI）中电子自由度的粘弹响应。我们的主要重点是在2D陈省身绝缘体表现出大量dissipationless粘度类似于量子霍尔粘度预测整数和分数量子霍尔状态。我们表明，无耗散粘度是一个TI的基本晶格几何形状的扭转变形的响应。粘弹性响应还表明，晶体位错在陈绝缘体将携带动量密度。我们简要地讨论了3D的概括，这意味着时间反演不变TI的将表现出量子霍尔粘度在其表面上。
We consider the viscoelastic response of the electronic degrees of freedom in 2D and 3D topological insulators (TI's). Our primary focus is on the 2D Chern insulator which exhibits a bulk dissipationless viscosity analogous to the quantum Hall viscosity predicted in integer and fractional quantum Hall states. We show that the dissipationless viscosity is the response of a TI to torsional deformations of the underlying lattice geometry. The viscoelastic response also indicates that crystal dislocations in Chern insulators will carry momentum density. We briefly discuss generalizations to 3D which imply that time-reversal invariant TI's will exhibit a quantum Hall viscosity on their surfaces.