Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition
Formation of Nitrogen-Vacancy Centers in Homoepitaxial Diamond Thin Films Grown via Microwave Plasma-Assisted Chemical Vapor Deposition
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微波等离子体辅助化学气相沉积同质外延金刚石薄膜中氮空位中心的形成
DOI：
10.1109/tnano.2016.2528678
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发表时间：
2016
影响因子：
2.4
通讯作者：
and K. M. Itoh
中科院分区：
文献类型：
--
作者：
H. Watanabe;H. Umezawa;T. Ishikawa;K. Kaneko;S. Shikata;J. Ishi-Hayase;and K. M. Itoh
提出了一种仅使用微波等离子体辅助化学气相沉积 (CVD) 方法来控制金刚石晶体表面附近带负电的氮空位 (NV-) 荧光中心的二维分布的模型。在这种方法中，CVD 金刚石层是通过微波等离子体辅助 CVD 使用同位素富集的甲烷 (12CH4)、氢气 (H2) 和氮气 (N2) 气体混合物在图案化金刚石 (0 0 1) 上同质外延生长。当通过共焦显微镜光致发光映射对表面进行成像时，可以观察到在金刚石表面上人工生成了细小的凹槽。发现 NV 中心选择性地分布到这些凹槽中。这些结果证明了通过微波等离子体辅助 CVD 形成可选择尺寸和密度的 NV 中心的有效方法，在金刚石量子传感器的生产中具有潜在的应用。
A model for controlling the two-dimensional distribution of negatively charged nitrogen-vacancy (NV-) fluorescent centers near the surface of a diamond crystal is presented, using only a microwave plasma-assisted chemical vapor deposition (CVD) method. In this approach, a CVD diamond layer is homoepitaxialy grown via microwave plasma-assisted CVD using an isotopically enriched methane (12CH4), hydrogen (H2), and nitrogen (N2) gas mixture on patterned diamond (0 0 1). When the surface is imaged by means of confocal microscope photoluminescence mapping, fine grooves are observed to have been generated artificially on the diamond surface. NV-centers are found to be distributed selectively into these grooves. These results demonstrate an effective means for the formation of NV-centers of selectable size and density via microwave plasma-assisted CVD, with potential application in the production of diamond quantum sensors.