Limits on vanadium oxide Mott metal-insulator transition field-effect transistors
Limits on vanadium oxide Mott metal-insulator transition field-effect transistors
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DOI：
10.1016/j.sse.2010.01.006
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发表时间：
2010-06-01
影响因子：
1.7
通讯作者：
Ramanathan, S.
中科院分区：
文献类型：
--
作者：
Hormoz, S.;Ramanathan, S.
已经有许多关于在场效应晶体管（FET）中使用金属氧化物材料作为半导体的替代品的提议，因为当前的Si FET技术不可避免地遇到固有的缩放限制。我们报告的潜在VO 2为基础的场致莫特晶体管的独立于设备的功率延迟特性和比较缩放限制的Si。由于VO 2中金属-绝缘体转变（MIT）的临界电场与Si的击穿场相似，并且由于VO 2中沿着一个方向进一步缩放的固有可能性，两种材料表现出相似的开关能量下限。VO 2中的MIT导致自由载流子浓度比Si大几个数量级，容易克服传统半导体MOSFET的载流子渡越时间限制。VO 2开关速度受到相变动力学的限制，更重要的是受到热耗散的限制。我们简单的模型预测的内在VO 2材料的下限开关时间的顺序为0.5 ps在01 μ W的功率传输。(C)2010爱思唯尔有限公司保留所有权利。
There have been numerous proposals for use of metal-oxide materials as an alternative to semiconductors in field-effect transistors (FET), as current Si FET technology inevitably encounters intrinsic scaling limitations. We report on device-independent power-delay characteristics of potential VO2-based field induced Mott transistors and compare scaling limits to that of Si. Since the critical electric field for metal-insulator transition (MIT) in VO2 is similar to the breakdown field of Si, and due to the inherent possibility of further scaling along one direction in VO2, both materials exhibit similar lower bounds on switching energy. MIT in VO2 results in free carrier concentration several orders of magnitude larger than that of Si, easily overcoming the carrier transit time limits of conventional semiconductor MOSFETs. VO2 switching speed is constrained by the kinetics of the phase transition and more importantly limited thermal dissipation. Our simple model predicts an intrinsic VO2 material lower bound switching time of the order of 0.5 ps at a power transfer of 01 mu W. (C) 2010 Elsevier Ltd. All rights reserved.