Relation between substrate surface morphology and microcrystalline silicon solar cell performance
Relation between substrate surface morphology and microcrystalline silicon solar cell performance
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DOI：
10.1016/j.jnoncrysol.2007.09.084
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发表时间：
2008-05
影响因子：
3.5
通讯作者：
M. Python;E. Vallat-Sauvain;J. Bailat;D. Dominé;L. Fesquet;Arvind Shah;C. Ballif
中科院分区：
文献类型：
--
作者：
M. Python;E. Vallat-Sauvain;J. Bailat;D. Dominé;L. Fesquet;Arvind Shah;C. Ballif
本文分析了共沉积在一系列具有不同表面形貌（从V形到U形）的衬底上的微晶硅（μc-Si：H）单结太阳电池的结构和电学性能。透射电子显微镜（TEM）用于量化沉积在各种基底上的单元内的裂纹密度。执行标准1太阳、可变照度测量（Vim）和暗J（V）测量以评估器件的电气性能。随着裂纹密度的增加，反向饱和电流密度（J 0）显著增加。通过引入一种新的等效电路，考虑到这样的裂纹作为非线性分流，作者能够与Vocand FF的减少的幅度增加的裂纹密度。
In the present paper, the structural and electrical performances of microcrystalline silicon (μc-Si:H) single junction solar cells co-deposited on a series of substrates having different surface morphologies varying from V-shaped to U-shaped valleys, are analyzed. Transmission electron microscopy (TEM) is used to quantify the density of cracks within the cells deposited on the various substrates. Standard 1 sun, variable illumination measurements (VIM) and Dark J(V) measurements are performed to evaluate the electrical performances of the devices. A marked increase of the reverse saturation current density (J0) is observed for increasing crack densities. By introducing a novel equivalent circuit taking into account such cracks as non-linear shunts, the authors are able to relate the magnitude of the decrease of Vocand FF to the increasing density of cracks.