Vacancy formation in indium investigated by positron lifetime spectroscopy
Vacancy formation in indium investigated by positron lifetime spectroscopy
复制标题
通过正电子寿命光谱研究铟中空位的形成
DOI：
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发表时间：
1985
期刊：
影响因子：
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通讯作者：
H. Schaefer
中科院分区：
文献类型：
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作者：
W. Weiler;H. Schaefer
对77~420K的高时间分辨率正电子寿命谱进行了详细的分析，清楚地表明了简单的两态俘获模型的有效性。在假设单位空位浓度的正电子捕获速率σ1V与温度无关的情况下，由寿命谱参数确定空位形成热HIVF=0.54+或-0.03 eV。讨论了由理论考虑所提出的西格玛IV与温度的关系的影响。与早期的自扩散数据进行了比较，得到空位迁移热HIVm=0.27+或-0.04 eV，并与非平衡实验结果进行了讨论。
A detailed analysis of positron lifetime spectra measured for In between 77 and 420K with high time resolution clearly shows the validity of the simple two-state trapping model. With the rate sigma 1V of positron trapping per unit vacancy concentration assumed to be independent of temperature the vacancy formation enthalpy HIVF=0.54+or-0.03 eV is determined from the parameters deduced from the lifetime spectra. The influence of a temperature dependence of sigma IV suggested by theoretical considerations is discussed. A comparison with earlier self-diffusion data yields the vacancy migration enthalpy HIVM=0.27+or-0.04 eV, which is discussed together with results of non-equilibrium experiments.