High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer
High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer
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DOI：
10.1109/led.2012.2232900
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发表时间：
2013-02-01
影响因子：
4.9
通讯作者：
Williams, J. R.
中科院分区：
文献类型：
--
作者：
Sharma, Y. K.;Ahyi, A. C.;Williams, J. R.
P_2O_5中的磷比氮更能钝化4 H-SiC/SiO_2界面。磷钝化后4 H-SiC金属氧化物半导体场效应晶体管（MOSFET）的场效应迁移率峰值约为80 cm（2）/V。S.然而，P2 O 5将SiO2层转化为磷硅酸盐玻璃（PSG）-一种引入电压不稳定性的极性材料，其否定了较低界面陷阱密度和较高迁移率的益处。我们报告了电压稳定性的显着改善，迁移率高达72 cm（2）/V。对于用沉积氧化物覆盖的薄PSG栅极层（类似于10 nm）制造的MOSFET，
Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC/SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm(2)/V . s. However, P2O5 converts the SiO2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm(2)/V . s for MOSFETs fabricated with a thin PSG gate layer (similar to 10 nm) capped with a deposited oxide.