Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration
Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration
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DOI：
10.1109/edtm53872.2022.9798125
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发表时间：
2022-03
期刊：
影响因子：
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通讯作者：
Simran Shahi;Maomao Liu;H. N. Jaiswal;Anindita Chakravarty;Sichen Wei;Yu Fu;Asma Ahmed;Anthony Cabanillas;Fei Yao;Huamin Li
中科院分区：
文献类型：
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作者：
Simran Shahi;Maomao Liu;H. N. Jaiswal;Anindita Chakravarty;Sichen Wei;Yu Fu;Asma Ahmed;Anthony Cabanillas;Fei Yao;Huamin Li
二维（2D）材料是下一代节能纳米电子学的希望所在。在这项工作中，我们利用亚1纳米的二维单层，从半金属到半导体和绝缘体装饰金属-半导体（MS）界面，并实现了出色的能力，操纵载流子注入通过二维单层。在Ti/MoS 2/p-Si/Al肖特基二极管中获得了5.4×104的整流比和2×105 S/m2的电导，表明了亚1 nm二维单层膜在提高各种电子器件性能方面的潜力。
Two-dimensional (2D) materials are promising for next-generation energy-efficient nanoelectronics. In this work, we exploited sub-1-nm 2D monolayers ranging from semimetal to semiconductor and insulator to decorate metal-semiconductor (MS) interfaces and achieved an outstanding capacity of manipulating carrier injections through the 2D monolayers. A record-high rectification ratio (5.4×104) and conductance (2×105 S/m2) were obtained from a Ti/MoS2/p-Si/Al Schottky diode, which demonstrates the promising potential of the sub-1-nm 2D monolayers to boost the performance of various electron devices.