Dominant nonradiative centers in InGaN single quantum well by time-resolved and two-wavelength excited photoluminescence
Dominant nonradiative centers in InGaN single quantum well by time-resolved and two-wavelength excited photoluminescence
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通过时间分辨和双波长激发光致发光研究 InGaN 单量子阱中的主要非辐射中心
DOI：
10.1002/pssb.201451499
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
and Y. Arakawa
中科院分区：
文献类型：
--
作者：
M. Julkarnain;N. Murakoshi;A. Z. M. Touhidul Islam;T. Fukuda;N. Kamata;and Y. Arakawa
用时间分辨和双波长激发光致发光研究了MOCVD方法生长的非掺杂InGaN单量子阱中的非辐射复合过程。外量子效率和载流子复合寿命随激发密度的增加而减小，这可以用增强的非辐射复合速率来解释。在量子阱内部和/或异质界面上发现了一个光学激活能约为1.17 eV的优势非辐射中心，这可能是确定其来源和在生长过程中消除它们的重要线索。
The nonradiative recombination processes in undoped InGaN single quantum well (SQW) grown by MOCVD method have been studied by time‐resolved and two‐wavelength excited photoluminescence. External quantum efficiency and carrier recombination lifetime decreases with increasing the excitation density which can be explained by an enhanced nonradiative recombination rate. A dominant nonradiative center with an optical activation energy of around 1.17 eV has been detected inside and/or hetero‐interface of SQW, which might be an important clue for determining their origin and eliminating them during growth process.