Thermo-optic properties of silicon-rich silicon nitride for on-chip applications
Thermo-optic properties of silicon-rich silicon nitride for on-chip applications
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DOI：
10.1364/oe.396969
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发表时间：
2020-08-17
期刊：
影响因子：
3.8
通讯作者：
Yu, Paul
中科院分区：
文献类型：
--
作者：
Nejadriahi, Hani;Friedman, Alex;Yu, Paul
我们展示了热光特性的富硅氮化硅（SRN）薄膜沉积使用等离子体增强化学气相沉积（PECVD）。马赫-曾德尔干涉仪（MZI）的光谱响应作为温度的函数的位移被用来表征具有不同硅含量的氮化硅薄膜的热光系数。氮化硅薄膜中硅含量与热光系数之间存在明显的关系，最高热光系数可达（1.65 +/-0.08）× 10（-4）K-1。此外，我们实现了一个SRN多模干涉仪（MMI）为基础的热光开关，消光比超过20 dB，两端口开关的总功耗为50 mW。(C)根据OSA开放获取出版协议的条款，2020年美国光学学会
We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder interferometers (MZIs) as a function of temperature were used to characterize the thermo-optic coefficients of silicon nitride films with varying silicon contents. A clear relation is demonstrated between the silicon content and the exhibited thermo-optic coefficient in silicon nitride films, with the highest achievable coefficient being as high as (1.65 +/- 0.08) x10(-4) K-1. Furthermore, we realize an SRN multi-mode interferometer (MMI) based thermo-optic switch with over 20 dB extinction ratio and total power consumption for two-port switching of 50 mW. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement