Facile synthesis of a novel AgIO3/BiVO4 photocatalyst with two-step charge separation to enhance visible-light-driven photocatalytic performance for carbamazepine degradation

Facile synthesis of a novel AgIO3/BiVO4 photocatalyst with two-step charge separation to enhance visible-light-driven photocatalytic performance for carbamazepine degradation
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轻松合成新型 AgIO3/BiVO4 光催化剂,具有两步电荷分离功能,可增强卡马西平降解的可见光驱动光催化性能

DOI:
10.1016/j.seppur.2021.119273
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发表时间:
2021-12
影响因子:
8.6
通讯作者:
Yuansheng Pei
Yuansheng Pei
中科院分区:
工程技术1区
文献类型:
--
作者:
Yu Zhang;Jun Cui;Hao Zhang;Yuansheng Pei

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光催化剂中光生电子-空穴的快速复合限制了光催化活性的提高。制备了一种新型的可见光驱动AgIO 3/BiVO 4光催化剂,该光催化剂具有两步电荷分离增强光催化活性。当AgIO 3与BiVO 4的最佳摩尔比为40%时,复合材料的禁带宽度为2.28 eV,小于BiVO 4的禁带宽度(2.41 eV)。在可见光照射下,该复合材料对罗丹明B的降解率为99.38%,高于BiVO 4和AgIO 3的1%和9%。在60 min内,卡马西平的降解率可达97.86%.因此,AgIO 3/BiVO 4光催化活性的显著提高依赖于两步电荷分离。第一步是十面体BiVO 4晶体中不同晶面之间的空间预分离。光生电子在{0 1 0}面上积累。此外,{1 1 0}面上的光生空穴促进了·OH自由基的产生。第二种分离是通过AgIO 3/BiVO 4的Ⅱ型异质结结构实现的。导带中的光生电子从BiVO 4 {0 1 0}面转移到AgIO 3,价带中的空穴在BiVO 4 {1 1 0}面上积累。该研究为进一步降低光催化剂中电子空穴复合提供了一种有效的方法,促进了光催化剂在污染水体净化中的环境应用。
Rapid recombination of photo-generated electron-hole in photocatalyst limits the improvement in photocatalytic activity. A novel visible-light-driven AgIO3/BiVO4photocatalyst with two-step charge separation enhancing photocatalytic activity was fabricated. The composite with optimum molar ratio of 40% AgIO3to BiVO4has a narrow band gap of 2.28 eV, which is smaller than that of BiVO4(2.41 eV). The composite presented 99.38% degradation efficiency of rhodamine B in 40 min under visible light irradiation, which is higher than 1% and 9% degradation efficiencies by BiVO4and AgIO3, respectively. In addition, a 97.86% degradation efficiency of carbamazepine was achieved in 60 min. Thus, the significant enhancement of photocatalytic activity depended on the two-step charge separation in AgIO3/BiVO4. The first step was the spatial pre-separation among different crystal facets in decahedral BiVO4. Photo-generated electrons accumulated on {0 1 0} facets. Moreover, photo-generated holes on {1 1 0} facets facilitated the production of •OH radicals. The second separation was achieved by the type Ⅱ heterojunction structure of AgIO3/BiVO4. Photo-generated electrons in conduction band were transferred from BiVO4{0 1 0} facets to AgIO3, and holes in valence band accumulated on BiVO4{1 1 0} facets. This work provides an effective method to further decrease electron-hole recombination in photocatalysts and promote their environmental application in contaminated water purification.
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