Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields.
Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields.
复制标题
磁场中 GaAs-AlxGa1-xAs 异质结处的空穴。
DOI：
10.1103/physrevb.32.6630
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发表时间：
1985
期刊：
影响因子：
--
通讯作者：
Sham
中科院分区：
文献类型：
--
作者：
Eric Yang S;Broido;Sham
本文研究了正常磁场中价带结构的各向异性和轻重空穴的混合对空穴反型层朗道能级的影响。忽略各向异性时出现的朗道能级的某些交叉点在包含各向异性时被去除。虽然我们的计算定性地解释了测得的多个回旋共振频率，但在定量上存在分歧。
The effects of anisotropy of the valence-band structure and of the mixing of the heavy and light holes on the Landau levels of the hole inversion layer in a normal magnetic field are studied. Some of the crossings of the Landau levels which occur when anisotropy is neglected are removed when it is included. While the measured multiple cyclotron-resonance frequencies are explained qualitatively by our calculation, there is quantitative disagreement.