Raman Spectroscopy and Kelvin Probe Force Microscopy characteristics of the CVD suspended graphene
Raman Spectroscopy and Kelvin Probe Force Microscopy characteristics of the CVD suspended graphene
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DOI：
10.1016/j.diamond.2016.01.008
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发表时间：
2016-04-01
影响因子：
4.1
通讯作者：
Gotszalk, Teodor
中科院分区：
文献类型：
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作者：
Gajewski, Krzysztof;Goniszewski, Stefan;Gotszalk, Teodor
在这项工作中，我们提出了结合开尔文探针力显微镜和拉曼光谱研究的支持和悬浮结构形成的化学气相沉积（CVD）生长的石墨烯。悬浮和负载石墨烯的功函数分别为-4.81 +/-0.06eV和-4.92 +/-0.06eV。通过G和2D模式相关性，我们表明，CVD石墨烯受到双轴应变的影响。与支撑的石墨烯的面积相比，悬浮的石墨烯上增加的接触电势差（CPD）是增加的应变（从0.05%到近似0.12%）而不是减少的掺杂（p掺杂从近似5.5 X 10（12）cm（-2）减少到近似4.5 X 10（12）cm（-2））的标志。(C)© 2016 Elsevier B. V.版权所有。
In this work we present combined Kelvin probe force microscopy and Raman spectroscopy studies of supported and suspended structures formed out of chemical vapor deposition (CVD) grown graphene. Work function of both suspended and supported graphene was -4.81 +/- 0.06eV and -4.92 +/- 0.06eV respectively. By G and 2D modes correlation we showed, that CVD graphene was influenced by biaxial strain. Increased contact potential difference (CPD) on the suspended graphene in comparison with the areas of the supported graphene was the sign of increased strain (from 0.05% to similar to 0.12%) rather than decreased doping (p-doping decreased from similar to 5.5 x 10(12)cm(-2) to similar to 4.5 x 10(12)cm(-2)). (C) 2016 Elsevier B.V. All rights reserved.