Modelling the Resistive State in a Transition Edge Sensor
Modelling the Resistive State in a Transition Edge Sensor
复制标题
对过渡边缘传感器中的电阻状态进行建模
DOI：
10.1007/s10909-012-0490-1
复制
发表时间：
2011
影响因子：
2
通讯作者：
J. Wigmore
中科院分区：
文献类型：
--
作者：
A. Kozorezov;A. Golubov;D. Martin;P. D. Korte;M. Lindeman;R. Hijmering;J. Kuur;H. Hoevers;L. Gottardi;M. Kupriyanov;J. Wigmore
我们在电阻分流结模型的基础上，考虑了超导系统跨越倾斜的洗衣板电势垒的相移，建立了过渡边传感器(TES)中电阻跃迁的模型。我们得到了TES，R(T，I)及其部分对数导数αI和βI的电阻随温度和电流的函数的解析表达式。结果表明，描述TES阻性态的所有主要参数都是由约瑟夫森临界电流对温度的依赖关系决定的，而不是由S-N跃迁的本征性质决定的。由于其自身的本征电抗，原始TES的复阻抗表现出两极行为。
We have developed a model for the resistive transition in a transition edge sensor (TES) based on the model of a resistively shunted junction, taking into account phase-slips of a superconducting system across the barriers of the tilted washing board potential. We obtained analytical expressions for the resistance of the TES, R(T,I), and its partial logarithmic derivatives αI and βI as functions of temperature and current. We have shown that all the major parameters describing the resistive state of the TES are determined by the dependence on temperature of the Josephson critical current, rather than by intrinsic properties of the S-N transition. The complex impedance of a pristine TES exhibits two-pole behaviour due to its own intrinsic reactance.