Defect-Induced Gas Adsorption on Graphene Transistors
Defect-Induced Gas Adsorption on Graphene Transistors
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DOI：
10.1002/admi.201701640
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发表时间：
2018-05-09
影响因子：
5.4
通讯作者：
Lin, Liwei
中科院分区：
文献类型：
--
作者：
Liu, Yumeng;Liu, Huiliang;Lin, Liwei
了解缺陷状态对气体在石墨烯上吸附的影响是开发基于石墨烯的气体传感器的核心。然而，在实验上区分由石墨烯上的缺陷引起的气体吸附，特别是转移的石墨烯样品上常见的带电杂质，一直是一个具有挑战性的问题。本文利用准静态栅压偏置的石墨烯晶体管，实验测量了气体在石墨烯上的电荷密度和散射强度，首次直接解析了缺陷诱导和本征气体在石墨烯上的吸附过程。此外，还分别通过化学补偿过程和栅极电压技术证明了缺陷诱导气体在石墨烯上吸附的消除和调节。这些发现为理解和操纵石墨烯上的缺陷-气体相互作用提供了重要的实验证据和通用平台，并可能推动使用石墨烯晶体管的无缺陷和无标记气体传感应用的发展。
Understanding the influences of defect states on gas adsorption on graphene is at the heart of developing graphene based gas sensors for practical applications. However, it has been challenging to experimentally discriminate the gas adsorptions induced by the defects on graphene, especially the charged impurities commonly found on the transferred graphene samples. Here, using a graphene transistor biased with the quasistatic gate voltage, this study experimentally measures the charge density and the scattering strength of the gas adsorbents on graphene and directly resolves the defect-induced versus intrinsic gas adsorption processes on graphene for the first time. Furthermore, the elimination and the tuning of the defect-induced gas adsorptions on graphene are also demonstrated via the chemical compensation process and the gate voltage technique, respectively. These findings provide critical experimental proofs and a versatile platform for understanding and manipulating the defect-gas interactions on graphene, and could advance the developments of defect-free and label-free gas sensing applications using graphene transistors.