Growth and physical property of epitaxial Co70Fe30 thin film on Si substrate via TiN buffer
Growth and physical property of epitaxial Co70Fe30 thin film on Si substrate via TiN buffer
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TiN缓冲层在Si衬底上外延Co70Fe30薄膜的生长及物理性能
DOI：
10.1063/1.2834706
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发表时间：
2008
影响因子：
4
通讯作者：
M. Rzchowski
中科院分区：
文献类型：
--
作者：
C. Ji;F. Lu;Y. Chang;J. J. Yang;M. Rzchowski
采用溅射技术在Si（001）衬底上生长了具有bcc结构的Co70Fe30外延薄膜，并以TiN为缓冲层。x射线衍射结果证实了薄膜的外延性质，晶体学关系被确定为Co70Fe30（002）⟨110⟩∕∕TiN（002）⟨100⟩∕Si（004）⟨100⟩。原子力显微镜对薄膜表面形貌的表征表明，在低于350℃的生长温度下可以获得光滑的表面。研究了60nm外延Co70Fe30薄膜的应变状态与生长温度的关系。利用超导量子界面器件磁强计测量了在300℃下生长的薄膜的磁化磁滞回线。
Epitaxial Co70Fe30 films with the bcc structure were grown on a Si(001) substrate with TiN as a buffer by sputtering technique. The x-ray diffraction results confirmed the epitaxial nature of the films and the crystallographic relationship was determined as Co70Fe30(002)⟨110⟩∕∕TiN(002)⟨100⟩∕∕Si(004)⟨100⟩. The surface morphology characterized by atomic force microscopy on our films revealed that smooth surfaces could be obtained at growth temperatures below 350°C. The strain state of 60nm epitaxial Co70Fe30 films was studied as a function of growth temperature. Magnetization hysteresis loops of the films grown at 300°C were measured using superconducting quantum interface device magnetometer.