Improved a-Si:H TFT pixel electrode circuits for active-matrix organic light emitting displays
Improved a-Si:H TFT pixel electrode circuits for active-matrix organic light emitting displays
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DOI：
10.1109/16.930646
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发表时间：
2001-07
影响因子：
3.1
通讯作者：
Yi He;R. Hattori;J. Kanicki
中科院分区：
文献类型：
--
作者：
Yi He;R. Hattori;J. Kanicki
设计了两种基于氢化非晶硅（a-Si:H）技术的改进四薄膜晶体管（TFTs）像素电极电路。两种电路都可以提供恒定的输出电流水平，并可以自动调整TFT阈值电压的变化。电路仿真结果表明，输出电流和输入电流之间具有良好的线性关系。使用这些电路可以实现高于/spl sim/5 /spl mu/A的输出电流水平。该电流水平可以提供高于1000 cd/m/sup /的像素电极亮度，而有机发光器件（OLED）的外部量子效率为1%。这些像素电极电路可以潜在地用于有源矩阵有机发光显示器（am - oled）。
Two improved four thin-film-transistors (TFTs) pixel electrode circuits based on hydrogenated amorphous silicon (a-Si:H) technology have been designed. Both circuits can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The circuit simulation results indicate that an excellent linearity between the output current and input current can be established. An output current level higher than /spl sim/5 /spl mu/A can be achieved with these circuits. This current level can provide a pixel electrode brightness higher than 1000 cd/m/sup 2/ with the organic light-emitting device (OLED) having an external quantum efficiency of 1%. These pixel electrode circuits can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).