Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics
Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics
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DOI：
10.1109/led.2015.2402517
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发表时间：
2015-04-01
影响因子：
4.9
通讯作者：
Tsai, M. -J.
中科院分区：
文献类型：
--
作者：
Lee, M. H.;Wei, Y. -T.;Tsai, M. -J.
证明了HfZrO_2（HZO）在600 ℃退火时的反铁电性，在40个I-DS期间，FET特性的SSmin = 23 mV/dec和SSavg = 50 mV/dec的突然开启。近非磁滞实现与反铁电类HZO由于一个小的reversible极化和矫顽场。一个可行的概念耦合的反铁电和铁电型HZO的低功耗电子和存储器的应用，分别使用。
The antiferroelectricity in HfZrO2 (HZO) annealed at 600 degrees C with an abrupt turn ON of FET characteristics with SSmin = 23 mV/dec and SSavg = 50 mV/dec over 4 decades of I-DS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.