Microstructure and misfit relaxation in SrTiO_3/SrRuO_3 bilayer films on LaAlO_3(100) substrates
Microstructure and misfit relaxation in SrTiO_3/SrRuO_3 bilayer films on LaAlO_3(100) substrates
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DOI：
10.1557/jmr.2001.0473
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发表时间：
2001-12
影响因子：
2.7
通讯作者：
J. Wu;C. Jia;K. Urban;J. Hao;X. Xi
中科院分区：
文献类型：
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作者：
J. Wu;C. Jia;K. Urban;J. Hao;X. Xi
我们通过高分辨率透射电子显微镜研究了(001)LaAlO_3基底上的SrTiO_3/SrRuO_3双层薄膜的微观结构。在SrRuO_3/LaAlO_3界面处，边界弗兰克部分位错或肖克利部分位错的堆垛层错和纳米孪晶的缺陷配置以及这些平面缺陷之间的复杂相互作用被发现是失配调节的主要方式。然而，SrTiO_3/SrRuO_3 系统中的失配主要是通过弹性应变来调节的。 SrTiO_3 层中观察到的大多数缺陷可能与 SrRuO_3 层中传播并到达 SrTiO_3/SrRuO_3 界面的[111]平面缺陷有关。此外，由于SrTiO_3/SrRuO_3界面的结构变化，SrTiO_3层中也会引入[110]平面缺陷。
We studied the microstructure of SrTiO_3/SrRuO_3 bilayer films on (001) LaAlO_3 substrates by high-resolution transmission electron microscopy. At the SrRuO_3/LaAlO_3 interface a defect configuration of stacking faults and nanotwins bounding either Frank partial dislocations or Shockley partial dislocations and complex interaction between these planar defects were found to be the dominant means of misfit accommodation. The misfit in the SrTiO_3/SrRuO_3 system, however, is mainly accommodated by elastic strain. Most of the observed defects in the SrTiO_3 layer can be related to the [111] planar defects in the SrRuO_3 layer propagating and reaching the SrTiO_3/SrRuO_3 interface. Furthermore, a [110] planar defect can also be introduced in the SrTiO_3 layer due to the structure change of the SrTiO_3/SrRuO_3 interface.