Direct Z-Scheme Heterojunction of Semicoherent FAPbBr3/Bi2WO6 Interface for Photoredox Reaction with Large Driving Force
Direct Z-Scheme Heterojunction of Semicoherent FAPbBr3/Bi2WO6 Interface for Photoredox Reaction with Large Driving Force
复制标题
半相干 FAPbBr(3)/Bi2WO6 界面的直接 Z 型异质结用于大驱动力光氧化还原反应
DOI:
10.1021/acsnano.0c03146
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发表时间:
2020-12-22
期刊:
影响因子:
17.1
通讯作者:
Roeffaers, Maarten B. J.
中科院分区:
文献类型:
--
作者:
Huang, Haowei;Zhao, Jiwu;Roeffaers, Maarten B. J.
Metal halide perovskites with direct band gap and strong light absorption are promising materials for harvesting solar energy; however, their relatively narrow band gap limits their redox ability when used as a photocatalyst. Adding a second semiconductor component with the appropriate band structure offsets can generate a Z-scheme photocatalytic system, taking full advantage of the perovskite's intrinsic properties. In this work, we develop a direct Z-scheme photocatalyst based on formamidinium lead bromide and bismuth tungstate (FAPbBr(3)/Bi2WO6) with strong redox ability for artificial solar-to-chemical energy conversion. With desirable band offsets and strong joint redox potential, the dual photocatalyst is shown to form a semicoherent heterointerface. Ultrafast transient infrared absorption studies employing selective excitation reveal synergetic photocarrier dynamics and demonstrate Z-scheme charge transfer mechanisms. Under simulated solar irradiation, a large driving force photoredox reaction (similar to 2.57 eV) of CO2 reduction coupled with benzyl alcohol oxidation to benzaldehyde is achieved on the Z-scheme FAPbBr(3)/Bi2WO6 photocatalyst, harnessing the full synergetic potential of the combined system.