Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 μm
Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 μm
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InP 上固源分子束外延生长 GaInNAsSb/InGaAs 单量子阱，光致发光峰值波长为 2.04 μm
DOI：
10.1116/1.1691411
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发表时间：
2004
影响因子：
1.4
通讯作者：
J. Harris
中科院分区：
文献类型：
--
作者：
Junxiang Fu;S. Bank;M. Wistey;H. Yuen;J. Harris
利用固体源分子束外延技术（MBE）在InP衬底上生长出了室温光致发光峰值波长为2.04 μm的单量子阱In0.53Ga0.47As/ ga0.47 in0.47 in0.53 n0.021 as0.949 sb0.03 /In0.53Ga0.47As。采用原位反射高能电子衍射对MBE生长进行了监测。利用双晶高分辨率x射线衍射和二次离子质谱对样品进行表征，并优化生长条件。研究了氮原子和锑原子在五元材料GaInNAsSb生长中的作用。
Single quantum wells In0.53Ga0.47As/Ga0.47In0.53N0.021As0.949Sb0.03/In0.53Ga0.47As with room-temperature photoluminescence peak wavelength at 2.04 μm were grown on InP substrate by solid-source molecular-beam epitaxy (MBE). In situ reflection high-energy electron diffraction was used to monitor the MBE growth. Double-crystal high-resolution x-ray diffraction and secondary ion mass spectrometry were utilized to characterize the samples and optimize the growth conditions. The roles of nitrogen and antimony atoms in the growth of quinary material, GaInNAsSb, were investigated.
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y