Tunnel {Dielectric} {Field}-{Effect} {Transistors} with {High} {Peak}-to-{Valley} {Current} {Ratio}
Tunnel {Dielectric} {Field}-{Effect} {Transistors} with {High} {Peak}-to-{Valley} {Current} {Ratio}
复制标题
隧道{电介质} {场}-{效应} {晶体管}，具有{高} {峰}-{谷} {电流} {比率}
DOI：
10.1007/s11664-016-5021-4
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发表时间：
2017
影响因子：
2.1
通讯作者：
Wang Ping
中科院分区：
文献类型：
--
作者：
Jiang Zhi;Zhuang Yiqi;Li Cong;Wang Ping
我们提出了具有较强负阻的硅兼容隧道介质场效应晶体管。导通隧穿电流得到了改善并完全抑制了双极性，最低亚阈值斜率(SS)为10 mV/dec。除了TFET模式外，我们的器件还具有负跨导特性，可产生高电流峰谷电流比(PVR)(高达107)。数值模拟显示了隧道介质层厚度、栅氧化层厚度和温度对PVR的影响。这种隧道介质晶体管具有较大的SS、导通电流和较高的PVR，为提高驱动电流提供了一种有效的技术，并实现了其在逻辑和存储电路中的应用。
We present silicon-compatible tunnel dielectric field-effect transistors with strong negative differential resistance. On-state tunneling currents have been improved and fully suppressed ambipolarity with lowest subthreshold slope (SS) 10 mV/dec. In addition to the TFET mode, our device works as the negative transconductance characteristic that produces a high current peak-to-valley current ratio (PVR) (up to 107). Numerical simulations demonstrate the impact of tunnel dielectric layer thickness, gate oxide thickness and temperature on the PVR. With the significant improvement in SS, on-state current and high PVR, this tunnel dielectric transistor provides an effective technique for enhancing the drive current, and realizes its applications in logic and memory circuits.